• Monday, May 12th 2014
    9.00 Welcome – S. Barnola, Chairman
      Session 1: Exotic materials and processes
    Chair: S. Barnola, CEA-Leti
    09:20 J. P. Chang - Invited
    Department of Chemical and Biomolecular Engineering, University of California, Los Angeles
    The Challenges and Opportunities in Plasma Etching of Functionally Enhanced Complex Material Systems
    10:00 R. Chansona, E. Pargona, M. Darnona, C. Petit-Etiennea, M. Fouchiera, B. Glueckb, P. Brianceaub, S. Barnolab
    aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France.
    bCEA-leti17 rue des Martyrs, F-38054 Grenoble Cedex, France
    Reactor wall plasma cleaning processes after InP etching in Cl2/CH4/Ar ICP discharge
    >> Download the presentation
    10:20 Coffee break
      Chair: E. Altamirano Sanchez, IMEC
    10:40 P. Azoley, S. Renard, S. Louwers - Invited
    Tronics Microsystems, 98 rue du Pré de l’Horme, Crolles, 38926, France
    Submicron Technologies at Tronics: Evolution of the patterning technologies for MEMS
    >> Download the presentation
    11:20 N. Gosseta*, J. Ladroueb, T. Tillochera, P. Lefaucheuxa, M. Boufnichelb, R. Dussarta
    aGREMI, 14 rue d'Issoudun, Orléans, 45067, France
    bSTMicroelectronics, 16 rue Pierre et Marie Curie, Tours, 37100, France

    Effect of surface fluorination on GaN deep dry etching defects
    >> Download the presentation
    11:40 G. Mannaerta, N. E. Posthuma, B. De Jaegera, V. Paraschivb, M. Van Hovea, K. Xua, S. Decouterea
    aImec, Kapeldreef 75, Leuven, B-3001, Belgium
    bS.C. Etch Tech Solutions, Str. Oancea 3 B1 D10 Apt.2, Iasi, Romania

    Etch development for E-mode GaN power HEMT fabrication
    >> Download the presentation
    12:00 Lunch break
      Session 2: Modeling and simulations
    Chair: M. Funk, Tokyo Electron Limited
    13:30 S.-H. Song, Y. Zhang, M. D. Logue, P. Tian, M. J. Kushner - Invited
    University of Michigan, Dept. of Electrical Engineering and Computer Science, Ann Arbor, MI 48109-2122 USA
    Pulsed Plasmas for Control of Reactive Fluxes in Microelectronics Fabrication
    >> Download the presentation
    14:10 E. Despiau-Pujoa, M. Brihoumb, G. Cungea, M. Darnona, N. Braithwaitec, O. Jouberta
    aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    bToulouse-Tech-Transfer, MRV, F-31432 Toulouse Cedex 4, France
    cThe Open University, Walton Hall, MK7 6AA, UK

    Pulsed ICP plasmas processing: 0D Model vs. Experiments
    >> Download the presentation
    14:30 K. Eriguchi, Y. Takao, K. Ono
    Kyoto University, Kyoto daigaku-Katsura, Nishikyo-ku, Kyoto 615-8540, Japan
    Plasma-Induced Damage in 3D Structures behind Device Scaling
    >> Download the presentation
    14:50 P. Brichon, E. Despiau-Pujo, O. Mourey, C. Petit-Etienne, G. Cunge, M. Darnon, O. Joubert
    Univ. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    MD simulations of chlorine plasmas interaction with ultrathin silicon films for advanced etch processes
    >> Download the presentation
    15:10 A.O. Davydovaa, E. Despiau-Pujoa, G. Cungea, L. Magaudb, L.Delfourb, D.B. Gravesc
    aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    bCNRS/UJF, Institut Ne?el, Grenoble, France
    cUniversity of California, Berkeley, CA 94720, USA

    Molecular Dynamics simulations of hydrogen plasma – graphene interaction
    15:30 Coffee break
      Session 3: Masking materials
    Chair: M. Darnon, CNRS-LTM
    15:50 M. Mebarkia,b,c, M. Darnonb, C. Jennya, D. Ristoiua, N. Possemec, O. Joubertb
    aSTMicroelectronics/LTM, 850 street Jean Monnet, 38926 Crolles, France
    bUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    cCEA-Leti, Minatec, 17 rue des Martyrs, F-38054 Grenoble, Cedex 9, France

    Role of the mask on contact etching at the 20 nm node
    >> Download the presentation
    16:10 P. Be?zarda, G. Cungea, E. Latu-Romaina, O. Jouberta, R. Tironb, X. Chevalierc
    aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    bCEA LETI, 17 avenue de martyrs, Grenoble, 38054, France
    cARKEMA France, Route Nationale117, BP34-64170 Lacq, France

    Plasma etching of sub-14nm holes in silicon using PS-b-PMMA block- copolymer
    >> Download the presentation
    16:30 P .Pimenta Barrosa, S. Barnolaa, A. Gharbia, M. Argouda, I. Servina, R. Tirona, X. Chevalierb, C. Navarrob,
    C. Nicoletb, C. Lapeyrea, C.Mongetc, E. Martineza
    aCEA-LETI, 17 Rue des Martyrs, 38054 Grenoble, France
    bARKEMA FRANCE, Route Nationale 117, BP34- 64170 Lacq, France
    cSTMicrolectronics, 850 Rue Jean Monnet, 38920 Crolles, France

    Etch challenges for DSA implementation in CMOS via patterning
    >> Download the presentation
    16:50 A. Vitala,b, T. Tillochera, R. Dussarta, M. Vayerb, C. Sinturelb
    aGroupe de recherches sur l’e?nerge?tique des milieux ionisés (GREMI), Polytech'Orleans, 14 rue d'Issoudun, B.P. 6744, F45067 Orleans Cedex 2, France
    bCentre de recherche sur la matie?re divise?e (CRMD), 1b rue de la Fe?rollerie, F45071 Orleans Cedex, France

    Submicrometric structured silicon surfaces obtained from polymer blend film by silica replication and cryogenic plasma etching
    >> Download the presentation
     
    Poster Session

    17:10 – 19:00  Poster session
    All authors accepted for oral presentation are also invited to present a poster
     P01 B. Adelina,b, A. Larruea,b, A. Lecestrea,b, P. Dubreuila,b, Y. Rouillardc, G. Boissierc, A. Vicetc, A. Monmayranta,b,
    O. Gauthier-Lafayea,b
    aLAAS-CNRS, 7 avenue du Colonel Roche, BP 54200, 31031 Toulouse cedex 4, France
    bUniversité de Toulouse ; UPS, INSA, INP, ISAE ; LAAS ; BP 54200, 31031 Toulouse cedex 4, France
    cInstitut d’Electronique du Sud (IES), Université Montpellier 2, Place Eugene Bataillon, 34095 Montpellier, France

    High aspect ratio deep etching in GaInAsSb/AlGaAsSb system by ICP-RIE plasma
    P02 J. Duboisa, N. Posséméb, G. Cungea, E. Latu-Romaina, L. Valliera, O. Jouberta
    aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    bCEA-LETI, 17 av. des martyrs, 38054 Grenoble Cedex, France

    Plasma wall interaction in H2 plasma processes
    P03 N. Sirse, M. Foucher, J.-P. Booth, P. Chabert
    Laboratoire de Physique des Plasmas, Route de Saclay, Palaiseau, 91128, France
    Ground-state bromine atoms measurements by Two-Photon Absorption Laser-Induced Fluorescence
    P04 M. Fouchiera, E. Pargona, B. Ben Bakirb, P. Brianceaub
    aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    bCEA-Leti, 17 rue des Martyrs, F-38054 Grenoble cedex 9, France

    Optimization of the optical transmission of submicron silicon rib waveguides
    P05 G. Krasnikova, O. Gushina, V. Bliznetsovb, L. Kolobovaa, Y. Gurskiya, A. Elpidiforova, Y. Gurskiya, C.Volka, P. Ignatov
    aInstitute of Molecular Electronics, Moscow, 103460, Russia
    bInstitute of Microelectronics, Singapore, 117685, Singapore

    Plasma etching processes for trench isolation technology
     P06 J. Jussota, E. Pargonb, B. Icardc
    aUniversité Joseph Fourier - BP 53, 38041 Grenoble Cedex 9, France
    bUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    cCEA - LETI, MINATEC, 17 rue des martyrs, F-38054 GRENOBLE Cedex 9, France

    Line width roughness mitigation techniques with e-beam lithography
    P07  S. Mouchtouris and G. Kokkoris
    Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Aghia Paraskevi, 15344, Greece
    Multiscale modeling in plasma reactors: Linking the operating parameters with surface roughness evolution
    P08 A. Lecestrea,c, P. Dubreuila,c, S. Noblecourta,b, J. Tasselia,c, E. Imbernona,c, F. Moranchoa,b,
    aCNRS, LAAS, 7 avenue du colonel Roche, BP 54200 F-31031 Toulouse Cedex4, France
    bUniv de Toulouse, UPS, LAAS, F-31031 Toulouse, France
    cUniv de Toulouse, LAAS, F-31031 Toulouse, France

    Anisotropic Deep Reactive Ion Etching without Aspect Ratio Dependence Etching for silicon power devices
    P09 M. Loucif Seiada,b,c,e, A. Singhb, V. K. MKuppuswamyb, Y. Caod, M. Ferhate, R. Gronheidb
    aKACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh, Saudi Arabi
    bimec, Kapeldreef 75, B-3001 Leuven, Belgium
    cCentre for Development of Advanced Technologies (CDTA), Baba Hassen, Algeria
    dAZ Electronic Materials USA Corp., 70 Meister Ave., Somerville, NJ 08876, USA
    eAmar Thelidji University of Laghouat, Algeria

    PMMA removal in diblock copolymer P(S-b-MMA) self-assembly process
    P10  Y. Songa, A.P. Mileninb
    aKU Leuven MTM, Kasteelpark Arenberg 44, 3001 Heverlee, Belgium
    bIMEC, Kapeldreef 75, 3001 Heverlee, Belgium

    Challenges of Dense and Isolated Structure Patterning: Depth Loading Study in STI
    P11 S.Averkin, V.Lukichev, A.Orlikovskiy, N. Orlikovskiy, A.Rylov, I. Turin.
    Institute of physics and technologies RAS..117218 Nakhimovskiy prospekt 36/1 FTIAN. Moscow Russia
    Anisotropic etching of Si with high aspect ratio and 30-50nm aperture in two-stage cyclic RIE process.
    P12 O. Polleta, R. Sommera, S. Barnolaa, C. de Butteta,b, C. Richardb, C. Jenny
    aCEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
    bST Microelectronics, 850 rue Jean Monnet, 38920 Crolles, France

    Evaluation of Plasma and Wet Processes for Trilayer Stack Rework in 14nm Technology Node: Impact on Si-BARC and Efficiency
    P13 V. A. Rainysh, A.V. Shurupov, M.A. Shurupov
    Joint Institute for High Temperatures of RAS (JIHT RAS), Russia
    Problems of gas sorbates on surfaces of dispersed particles and their solution by using non-equilibrium Plasma
    P14 T. Zhenga, I. Vosa, R. Athimulama, E. Altamirano Sancheza, K. Xua, D. Hellinb, E. Camerottob, H. Jumelb, M. Titusc
    aIMEC, 3001 Leuven, Belgium
    bLam Research, 3001 Leuven, Belgium
    cLam Research, 4400 Cushing Parkway, Fremont, California, USA

    N10 SADP Bulk FinFET Depth Micro Loading Improvement With Bias Pulsing Plasma
    P15 T. Tillochera, X. Liua, A. Vitala,b, N. Gosseta, P. Lefaucheuxa, M. Vayerb, C. Sinturelb, M. Boufnichelc, R. Dussarta
    aGREMI, Polytech’Orléans/CNRS, 14 rue d’Issoudun, BP 6744, Orle?ans, 45067, France
    bCRMD, 1b rue de la Férollerie, Orle?ans, 45071, France
    cSTMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, Tours, 37071, France

    Multiscale holes in silicon by cryogenic etching
    P16 J.-Q. Zhou, M.-D. Hu, C.-L. Zhang, Q.-Y. He, H.-Y. Zhang
    Semiconductor Manufacturing International Corporation, No.18 Zhang Jiang Rd., Pudong New Area, Shanghai, 201203, P.R.China
    A Study of Advanced All-in-one Dual Damascene Etch
    P17 J. Zhaoa, M. Funka, L. Chena, T. Nozawa
    aAustin Plasma Lab., Tokyo Electron America, Austin, Texas, 78741, USA
    bTEL Technology Center Sendai, Tokyo Electron Limited, 2-1 Osawa 3-chome, Sendai 981-3137, Japan

    Evolution of Plasma Generated Vacuum UV in Diffusion Plasma
    19.00 End of day


    Tuesday, May 13th 2014
      Session 4: Sidewall roughness
      Chair: E. Pargon, CNRS-LTM
    08:30 S. Suri, A. M. Myers, S. H. Sung, B. Turkot - Invited
    Components Research, Intel Corporation, Hillsboro, Oregon
    Evolving Selectivity Requirements and New Materials Challenges in Plasma Etch
    09:10 O. Rosa, P. Gourauda, M. Fouchierb, E. Pargonb, S. Barnolab,
    aSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France
    bUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex.

    New plasma processes for improved dimensional control and LWR for a 28nm gate patterning
    >> Download the presentation
    09:30 P. De Scheppera,b, E. Altamirano-Sancheza, A. Goodyearc, Z. El Otella,b, J.- F. de Marneffea, S. De Gendta,b
    aIMEC, Kapeldreef 75, B-3001 Leuven, Belgium
    bKatholieke Universiteit Leuven (KULeuven), Department of Chemistry, Leuven, Belgium
    cOxford Instruments Plasma Technology, Bristol, UK

    Photoresist treatment using an ICP H2 plasma and low ESC temperature: LWR study
    >> Download the presentation
    09:50 E. Dupuya, M. Fouchiera, E. Pargona, J. Pradellesb, H. Grampeixb, P. Pimenta- Barrosb, S. Barnolab, O. Jouberta
    aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France
    bCEA-Léti, 17 avenue des Martyrs, F-38054 cedex 09, Grenoble, France

    Sidewall roughness characterization of a 20nm half-pitch resist-core spacer patterning process
    >> Download the presentation
    10:10 Coffee break
      Session 5: Plasma diagnostics
      Chair: J.-P. Booth, CNRS-LPP
    10:30 D. Gahan and M. Hopkins - Invited
    Impedans Ltd, Unit 8 Woodford Court, Dublin 17, Ireland
    Ion Energy Distribution Measurements – Past, Present and Future.
    >> Download the presentation
    11:10 M. Fouchera, E. Carboneb, J.-P. Bootha, P. Chaberta,
    aLaboratoire de Physique des Plasmas, Route de Saclay, Palaiseau, 91128, France
    bUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex.France

    Inductively-coupled plasmas in Cl2/O2 : measurements of atom, ClxOy and electron densities
    >> Download the presentation
    11:30 G. Cungea, E. Despiau-Pujoa, M. Darnona, N. St J. Braithwaiteb, N. Sadeghia, O. Jouberta
    aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex.France
    bDepartment of Physical Sciences, The Open University, Milton Keynes, MK7 6AA,UK

    Producing ion waves from acoustic pressure waves in pulsed inductive plasmas
    >> Download the presentation
    11:50 Z. el Otella,b, D. Marinova, V. Samarab, M. D. Bowdena,c, J. F. de Marneffeb, P. Verdonckb, N. St. J. Braithwaitea
    aDepartment of Physical Sciences, The Open University, Milton Keynes, MK7 6AA,UK
    bimec, Kapeldreef 75, 3001 Leuven, Belgium
    cElectrical Engineering and Electronics Department, University of Liverpool, L69 3GJ, UK

    Development of a novel wafer probe for in-situ measurements
    12:10 Lunch break
      Session 6: Plasma-induced damage
      Chair: N. Possémé, CEA-Leti
    13:40 A. Ranjan, M. Wang, S. Sherpa, S. Voronin, V. Rastogi, P. Ventzek - Invited
    Tokyo Electron Technology Center, America, LLC, 255 Fuller Rd., STE 244, Albany, NY, USA
    Tokyo Electron America, Inc.2400 Grove Blvd., Austin, TX , USA

    Spatially Segregated Plasmas for High Selectivity Etching and Mitigation of Plasma Induced Damage
    14:20 L. Zhanga,b, J.-F. de Marneffea, F. Vajdaa, M. Heynea, V. D. Rutigliania, L. Wena, J. Bommela, Z. Tokeia, S. de Gendta,b,
    M. R. Baklanova
    aIMEC, 3001 Leuven, Belgium
    bDepartment of Chemistry, Katholieke Universiteit Leuven, 3001 Leuven, Belgium

    Low damage integration of ultralow-k porous organosilicate glasses by Pore-Stuffing approach
    >> Download the presentation
    14:40 T. Zheng, V. Paraschiv, H. Dekkers, L.-A. Ragnarsson, A. Dangol, S. A. Chew
    IMEC, 3001 Leuven, Belgium
    TiN/TaN Selective Etch In Replacement Metal Gate with Chlorine Based Plasmas
    >> Download the presentation
    15:00 A. Paterson, J. Shoeb, S. Sriraman, T. Kamp
    Lam Research Corporation, 4650 Cushing Parkway, Fremont CA 94538 USA
    The role of VUV photons in sub-threshold etching of Si
    15:20 F. Shang, X.-Y. Meng, F.-L. Li, Q.-H. Han, H.-Y. Zhang
    Semiconductor Manufacturing International Corporation, No.18 Zhang Jiang Rd., Pudong New Area, Shanghai, 201203, P.R.China
    Synchronous Pulsing Plasma Utilization at Dummy Poly Gate Removal Process
    15:40 Closing remarks




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