Monday, May 12th 2014 |
9.00 | Welcome – S. Barnola, Chairman |
| Session 1: Exotic materials and processes |
Chair: S. Barnola, CEA-Leti |
09:20 | J. P. Chang - Invited Department of Chemical and Biomolecular Engineering, University of California, Los Angeles The Challenges and Opportunities in Plasma Etching of Functionally Enhanced Complex Material Systems |
10:00 | R. Chansona, E. Pargona, M. Darnona, C. Petit-Etiennea, M. Fouchiera, B. Glueckb, P. Brianceaub, S. Barnolab aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France. bCEA-leti17 rue des Martyrs, F-38054 Grenoble Cedex, France Reactor wall plasma cleaning processes after InP etching in Cl2/CH4/Ar ICP discharge >> Download the presentation |
10:20 | Coffee break |
| Chair: E. Altamirano Sanchez, IMEC |
10:40 | P. Azoley, S. Renard, S. Louwers - Invited Tronics Microsystems, 98 rue du Pré de l’Horme, Crolles, 38926, France Submicron Technologies at Tronics: Evolution of the patterning technologies for MEMS >> Download the presentation
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11:20 | N. Gosseta*, J. Ladroueb, T. Tillochera, P. Lefaucheuxa, M. Boufnichelb, R. Dussarta aGREMI, 14 rue d'Issoudun, Orléans, 45067, France bSTMicroelectronics, 16 rue Pierre et Marie Curie, Tours, 37100, France Effect of surface fluorination on GaN deep dry etching defects >> Download the presentation
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11:40 | G. Mannaerta, N. E. Posthuma, B. De Jaegera, V. Paraschivb, M. Van Hovea, K. Xua, S. Decouterea aImec, Kapeldreef 75, Leuven, B-3001, Belgium bS.C. Etch Tech Solutions, Str. Oancea 3 B1 D10 Apt.2, Iasi, Romania Etch development for E-mode GaN power HEMT fabrication >> Download the presentation
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12:00 | Lunch break |
| Session 2: Modeling and simulations |
Chair: M. Funk, Tokyo Electron Limited |
13:30 | S.-H. Song, Y. Zhang, M. D. Logue, P. Tian, M. J. Kushner - Invited University of Michigan, Dept. of Electrical Engineering and Computer Science, Ann Arbor, MI 48109-2122 USA Pulsed Plasmas for Control of Reactive Fluxes in Microelectronics Fabrication >> Download the presentation
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14:10 | E. Despiau-Pujoa, M. Brihoumb, G. Cungea, M. Darnona, N. Braithwaitec, O. Jouberta aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France bToulouse-Tech-Transfer, MRV, F-31432 Toulouse Cedex 4, France cThe Open University, Walton Hall, MK7 6AA, UK Pulsed ICP plasmas processing: 0D Model vs. Experiments >> Download the presentation
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14:30 | K. Eriguchi, Y. Takao, K. Ono Kyoto University, Kyoto daigaku-Katsura, Nishikyo-ku, Kyoto 615-8540, Japan Plasma-Induced Damage in 3D Structures behind Device Scaling >> Download the presentation
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14:50 | P. Brichon, E. Despiau-Pujo, O. Mourey, C. Petit-Etienne, G. Cunge, M. Darnon, O. Joubert Univ. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France MD simulations of chlorine plasmas interaction with ultrathin silicon films for advanced etch processes >> Download the presentation
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15:10 | A.O. Davydovaa, E. Despiau-Pujoa, G. Cungea, L. Magaudb, L.Delfourb, D.B. Gravesc aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France bCNRS/UJF, Institut Ne?el, Grenoble, France cUniversity of California, Berkeley, CA 94720, USA Molecular Dynamics simulations of hydrogen plasma – graphene interaction |
15:30 | Coffee break |
| Session 3: Masking materials |
Chair: M. Darnon, CNRS-LTM |
15:50 | M. Mebarkia,b,c, M. Darnonb, C. Jennya, D. Ristoiua, N. Possemec, O. Joubertb aSTMicroelectronics/LTM, 850 street Jean Monnet, 38926 Crolles, France bUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France cCEA-Leti, Minatec, 17 rue des Martyrs, F-38054 Grenoble, Cedex 9, France Role of the mask on contact etching at the 20 nm node >> Download the presentation
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16:10 | P. Be?zarda, G. Cungea, E. Latu-Romaina, O. Jouberta, R. Tironb, X. Chevalierc aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France bCEA LETI, 17 avenue de martyrs, Grenoble, 38054, France cARKEMA France, Route Nationale117, BP34-64170 Lacq, France Plasma etching of sub-14nm holes in silicon using PS-b-PMMA block- copolymer >> Download the presentation
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16:30 | P .Pimenta Barrosa, S. Barnolaa, A. Gharbia, M. Argouda, I. Servina, R. Tirona, X. Chevalierb, C. Navarrob, C. Nicoletb, C. Lapeyrea, C.Mongetc, E. Martineza aCEA-LETI, 17 Rue des Martyrs, 38054 Grenoble, France bARKEMA FRANCE, Route Nationale 117, BP34- 64170 Lacq, France cSTMicrolectronics, 850 Rue Jean Monnet, 38920 Crolles, France Etch challenges for DSA implementation in CMOS via patterning >> Download the presentation
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16:50 | A. Vitala,b, T. Tillochera, R. Dussarta, M. Vayerb, C. Sinturelb aGroupe de recherches sur l’e?nerge?tique des milieux ionisés (GREMI), Polytech'Orleans, 14 rue d'Issoudun, B.P. 6744, F45067 Orleans Cedex 2, France bCentre de recherche sur la matie?re divise?e (CRMD), 1b rue de la Fe?rollerie, F45071 Orleans Cedex, France Submicrometric structured silicon surfaces obtained from polymer blend film by silica replication and cryogenic plasma etching >> Download the presentation
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| Poster Session |
17:10 – 19:00 | Poster session All authors accepted for oral presentation are also invited to present a poster |
P01 | B. Adelina,b, A. Larruea,b, A. Lecestrea,b, P. Dubreuila,b, Y. Rouillardc, G. Boissierc, A. Vicetc, A. Monmayranta,b, O. Gauthier-Lafayea,b aLAAS-CNRS, 7 avenue du Colonel Roche, BP 54200, 31031 Toulouse cedex 4, France bUniversité de Toulouse ; UPS, INSA, INP, ISAE ; LAAS ; BP 54200, 31031 Toulouse cedex 4, France cInstitut d’Electronique du Sud (IES), Université Montpellier 2, Place Eugene Bataillon, 34095 Montpellier, France High aspect ratio deep etching in GaInAsSb/AlGaAsSb system by ICP-RIE plasma |
P02 | J. Duboisa, N. Posséméb, G. Cungea, E. Latu-Romaina, L. Valliera, O. Jouberta aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France bCEA-LETI, 17 av. des martyrs, 38054 Grenoble Cedex, France Plasma wall interaction in H2 plasma processes |
P03 | N. Sirse, M. Foucher, J.-P. Booth, P. Chabert Laboratoire de Physique des Plasmas, Route de Saclay, Palaiseau, 91128, France Ground-state bromine atoms measurements by Two-Photon Absorption Laser-Induced Fluorescence |
P04 | M. Fouchiera, E. Pargona, B. Ben Bakirb, P. Brianceaub aUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France bCEA-Leti, 17 rue des Martyrs, F-38054 Grenoble cedex 9, France Optimization of the optical transmission of submicron silicon rib waveguides |
P05 | G. Krasnikova, O. Gushina, V. Bliznetsovb, L. Kolobovaa, Y. Gurskiya, A. Elpidiforova, Y. Gurskiya, C.Volka, P. Ignatov aInstitute of Molecular Electronics, Moscow, 103460, Russia bInstitute of Microelectronics, Singapore, 117685, Singapore Plasma etching processes for trench isolation technology |
P06 | J. Jussota, E. Pargonb, B. Icardc aUniversité Joseph Fourier - BP 53, 38041 Grenoble Cedex 9, France bUniv. Grenoble Alpes , CNRS, CEA-Leti Minatec, LTM, F-38054 Grenoble Cedex, France cCEA - LETI, MINATEC, 17 rue des martyrs, F-38054 GRENOBLE Cedex 9, France Line width roughness mitigation techniques with e-beam lithography |
P07 | S. Mouchtouris and G. Kokkoris Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Aghia Paraskevi, 15344, Greece Multiscale modeling in plasma reactors: Linking the operating parameters with surface roughness evolution |
P08 | A. Lecestrea,c, P. Dubreuila,c, S. Noblecourta,b, J. Tasselia,c, E. Imbernona,c, F. Moranchoa,b, aCNRS, LAAS, 7 avenue du colonel Roche, BP 54200 F-31031 Toulouse Cedex4, France bUniv de Toulouse, UPS, LAAS, F-31031 Toulouse, France cUniv de Toulouse, LAAS, F-31031 Toulouse, France Anisotropic Deep Reactive Ion Etching without Aspect Ratio Dependence Etching for silicon power devices |
P09 | M. Loucif Seiada,b,c,e, A. Singhb, V. K. MKuppuswamyb, Y. Caod, M. Ferhate, R. Gronheidb aKACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh, Saudi Arabi bimec, Kapeldreef 75, B-3001 Leuven, Belgium cCentre for Development of Advanced Technologies (CDTA), Baba Hassen, Algeria dAZ Electronic Materials USA Corp., 70 Meister Ave., Somerville, NJ 08876, USA eAmar Thelidji University of Laghouat, Algeria PMMA removal in diblock copolymer P(S-b-MMA) self-assembly process |
P10 | Y. Songa, A.P. Mileninb aKU Leuven MTM, Kasteelpark Arenberg 44, 3001 Heverlee, Belgium bIMEC, Kapeldreef 75, 3001 Heverlee, Belgium Challenges of Dense and Isolated Structure Patterning: Depth Loading Study in STI |
P11 | S.Averkin, V.Lukichev, A.Orlikovskiy, N. Orlikovskiy, A.Rylov, I. Turin. Institute of physics and technologies RAS..117218 Nakhimovskiy prospekt 36/1 FTIAN. Moscow Russia Anisotropic etching of Si with high aspect ratio and 30-50nm aperture in two-stage cyclic RIE process. |
P12 | O. Polleta, R. Sommera, S. Barnolaa, C. de Butteta,b, C. Richardb, C. Jenny aCEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France bST Microelectronics, 850 rue Jean Monnet, 38920 Crolles, France Evaluation of Plasma and Wet Processes for Trilayer Stack Rework in 14nm Technology Node: Impact on Si-BARC and Efficiency |
P13 | V. A. Rainysh, A.V. Shurupov, M.A. Shurupov Joint Institute for High Temperatures of RAS (JIHT RAS), Russia Problems of gas sorbates on surfaces of dispersed particles and their solution by using non-equilibrium Plasma |
P14 | T. Zhenga, I. Vosa, R. Athimulama, E. Altamirano Sancheza, K. Xua, D. Hellinb, E. Camerottob, H. Jumelb, M. Titusc aIMEC, 3001 Leuven, Belgium bLam Research, 3001 Leuven, Belgium cLam Research, 4400 Cushing Parkway, Fremont, California, USA N10 SADP Bulk FinFET Depth Micro Loading Improvement With Bias Pulsing Plasma |
P15 | T. Tillochera, X. Liua, A. Vitala,b, N. Gosseta, P. Lefaucheuxa, M. Vayerb, C. Sinturelb, M. Boufnichelc, R. Dussarta aGREMI, Polytech’Orléans/CNRS, 14 rue d’Issoudun, BP 6744, Orle?ans, 45067, France bCRMD, 1b rue de la Férollerie, Orle?ans, 45071, France cSTMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, Tours, 37071, France Multiscale holes in silicon by cryogenic etching |
P16 | J.-Q. Zhou, M.-D. Hu, C.-L. Zhang, Q.-Y. He, H.-Y. Zhang Semiconductor Manufacturing International Corporation, No.18 Zhang Jiang Rd., Pudong New Area, Shanghai, 201203, P.R.China A Study of Advanced All-in-one Dual Damascene Etch |
P17 | J. Zhaoa, M. Funka, L. Chena, T. Nozawa aAustin Plasma Lab., Tokyo Electron America, Austin, Texas, 78741, USA bTEL Technology Center Sendai, Tokyo Electron Limited, 2-1 Osawa 3-chome, Sendai 981-3137, Japan Evolution of Plasma Generated Vacuum UV in Diffusion Plasma |
19.00 | End of day |